Soitec and NTU Singapore Breakthrough in GaN Technology for Future 6G RF Semiconductor Devices
Published: 20 Mar 2026
Author: Precedence Research
Soitec and Nanyang Technological University(NTU) have achieved a significant milestone in their joint effort on developing next-generation radio-frequency semiconductor technologies for use in 6G wireless communication systems. Recently, Soitec and NTU Singapore announced the results of their ongoing research collaboration in developing gallium nitride(GaN) semiconductor devices for use in 6G wireless communication systems.
GaN semiconductor structures are being studied for their potential in developing semiconductor devices for use in emerging wireless communication systems. GaN semiconductor materials have been gaining popularity in RF power devices due to their ability to support high power densities and their ability to efficiently operate at high frequencies. These properties make GaN an important technology for use in cellular base stations, satellite communications, and advanced radar systems.
Advances in GaN-On-Silicon RF Technology
During the press conference, the team showcased their progress in GaN-on-silicon RF technology using engineered substrates developed by Soitec. This technology enables RF semiconductor devices to benefit from the high power of GaN while leveraging the economic benefits of silicon wafers. This is expected to enable semiconductor companies to develop high-frequency RF devices more efficiently as communication standards evolve.
The team has also been working on device concepts that aim to enhance energy efficiency and signal quality at frequencies that are likely to be employed in future 6G communication systems. The research has achieved improvements in the efficiency and RF output of transistors, indicating that GaN technology is ready to meet the stringent requirements of future wireless communication infrastructure.
The global RF power semiconductor market size was calculated at USD 6.52 billion in 2025 and is predicted to increase from USD 7.05 billion in 2026 to approximately USD 14.21 billion by 2035, expanding at a CAGR of 8.10% from 2026 to 2035 as the demand grows for high-frequency and high-efficiency products used in 5G, satellite communication systems and radar systems.
Supporting Future 5G Infrastructure
This achievement by Soitec and Nanyang Technological University shows how industry-academia collaboration can be used to speed up innovation in RF semiconductor design. Further advancements in GaN technology for RF devices have the potential to lead to smaller base stations, more wireless capacity, and faster speeds for future networks.
A recent report by Precedence Research highlights that the RF power semiconductor market is benefiting from advancements in wide-bandgap semiconductor materials such as gallium nitride(GaN) and silicon carbide(SiC) used in RF power devices.